? semiconductor components industries, llc, 2016 september, 2016 ? rev. 20 1 publication order number: mjd44h11/d mjd44h11(npn), mjd45h11(pnp) complementary power transistors dpak for surface mount applications designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. features ? lead formed for surface mount application in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (??1? suffix) ? electrically similar to popular d44h/d45h series ? low collector emitter saturation voltage ? fast switching speeds ? complementary pairs simplifies designs ? epoxy meets ul 94 v?0 @ 0.125 in ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c, common for npn and pnp, minus sign, ???, for pnp omitted, unless otherwise noted) rating symbol max unit collector?emitter voltage v ceo 80 vdc emitter?base voltage v eb 5 vdc collector current ? continuous i c 8 adc collector current ? peak i cm 16 adc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation (note 1) @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ?55 to +150 c esd ? human body model hbm 3b v esd ? machine model mm c v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 8 amperes 80 volts, 20 watts ipak case 369d style 1 dpak case 369c style 1 marking diagrams a = assembly location y = year ww = work week j4xh11 = device code x = 4 or 5 g = pb?free package 1 2 3 4 ayww j4 xh11g see detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ordering information 1 2 3 4 ayww j4 xh11g www. onsemi.com ipak dpak complementary 1 base 3 emitter collector 2, 4 1 base 3 emitter collector 2, 4 dpak case 369g style 1 1 2 3 4
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 6.25 c/w thermal resistance, junction?to?ambient (note 2) r ja 71.4 c/w lead temperature for soldering t l 260 c 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. electrical characteristics (t a = 25 c, common for npn and pnp, minus sign, ???, for pnp omitted, unless otherwise noted) characteristic symbol min typ max unit off characteristics collector?emitter sustaining voltage (i c = 30 ma, i b = 0) v ceo(sus) 80 ? ? vdc collector cutoff current (v ce = rated v ceo , v be = 0) i ces ? ? 1.0 a emitter cutoff current (v eb = 5 vdc) i ebo ? ? 1.0 a on characteristics collector?emitter saturation voltage (i c = 8 adc, i b = 0.4 adc) v ce(sat) ? ? 1 vdc base?emitter saturation voltage (i c = 8 adc, i b = 0.8 adc) v be(sat) ? ? 1.5 vdc dc current gain (v ce = 1 vdc, i c = 2 adc) (v ce = 1 vdc, i c = 4 adc) h fe 60 40 ? ? ? ? ? dynamic characteristics collector capacitance (v cb = 10 vdc, f test = 1 mhz) mjd44h11 mjd45h11 c cb ? ? 45 130 ? ? pf gain bandwidth product (i c = 0.5 adc, v ce = 10 vdc, f = 20 mhz) mjd44h11 mjd45h11 f t ? ? 85 90 ? ? mhz switching times delay and rise times (i c = 5 adc, i b1 = 0.5 adc) mjd44h11 mjd45h11 t d + t r ? ? 300 135 ? ? ns storage time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjd44h11 mjd45h11 t s ? ? 500 500 ? ? ns fall time (i c = 5 adc, i b1 = i b2 = 0.5 adc) mjd44h11 mjd45h11 t f ? ? 140 100 ? ? ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 3 t, time (ms) 1 0.01 1 k 0.3 0.2 0.07 r(t), effective transient thermal r jc(t) = r(t) r jc r jc = 6.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 resistance (normalized) 0.7 figure 1. thermal response 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 single pulse d = 0.5 0.1 0.02 0.01 0.05 i c , collector current (amp) 20 1 v ce , collector-emitter voltage (volts) 0.02 3 100 2 0.5 5 0.1 thermal limit @ t c = 25 c wire bond limit 5 7 20 70 10 100 s dc 0.05 0.3 1 3 10 50 30 figure 2. maximum forward bias safe operating area 1ms 500 s 5ms there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 1. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 25 25 t, temperature ( c) 0 50 75 100 125 150 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c figure 3. power derating t c t a surface mount
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 4 figure 4. mjd44h11 dc current gain figure 5. mjd45h11 dc current gain i c , collector current (a) 10 1 0.1 0.01 10 100 1000 figure 6. mjd44h11 dc current gain figure 7. mjd45h11 dc current gain figure 8. mjd44h11 saturation voltage v ce(sat) figure 9. mjd45h11 saturation voltage v ce(sat) i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 0.1 0.2 0.3 0.4 0.6 0.7 0.8 h fe , dc current gain v ce(sat) , coll?emit saturation voltage (v) 150 c ?55 c 25 c v ce = 1 v i c , collector current (a) 10 1 0.1 0.01 10 100 1000 h fe , dc current gain 150 c ?55 c 25 c v ce = 1 v i c , collector current (a) 10 1 0.1 0.01 10 100 1000 h fe , dc current gain 150 c ?55 c 25 c v ce = 4 v i c , collector current (a) 10 1 0.1 0.01 10 100 1000 h fe , dc current gain 150 c ?55 c 25 c v ce = 4 v 0.5 150 c ?55 c 25 c ic/ib = 20 i c , collector current (a) 10 1 0.1 0.01 0 0.1 0.2 0.3 0.4 0.6 0.7 0.8 v ce(sat) , coll?emit saturation voltage (v) 0.5 150 c ?55 c 25 c ic/ib = 20
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 5 figure 10. mjd44h11 saturation voltage v be(sat) figure 11. mjd45h11 saturation voltage v be(sat) i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 figure 12. mjd44h11 collector saturation region figure 13. mjd45h11 collector saturation region i b , base current (ma) i b , base current (ma) 10,000 1000 100 10 1 0.1 0 0.4 0.2 0.6 1.0 1.4 1.8 2.0 figure 14. mjd44h11 capacitance figure 15. mjd45h11 capacitance v r , reverse voltage (v) 100 10 1 0.1 10 100 1000 v be(sat) , base?emit saturation voltage (v) v ce , collector?emitter voltage (v) c, capacitance (pf) 150 c ?55 c 25 c ic/ib = 20 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v be(sat) , base?emit saturation voltage (v) 150 c ?55 c 25 c ic/ib = 20 0.8 1.2 1.6 t a = 25 c i c = 8 a 1 a i c = 3 a 0.5 a i c = 0.1 a 10,000 1000 100 10 1 0.1 0 0.4 0.2 0.6 1.0 1.4 1.8 2.0 v ce , collector?emitter voltage (v) 0.8 1.2 1.6 t a = 25 c cob v r , reverse voltage (v) 100 10 1 0.1 10 100 1000 c, capacitance (pf) cob i c = 8 a 1 a i c = 3 a 0.5 a i c = 0.1 a
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 6 figure 16. mjd44h11 current?gain?bandwidth product figure 17. mjd45h11 current?gain?bandwidth product i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 10 100 10 1 0.1 0.01 10 100 f ta u , current?gain?bandwidth product f ta u , current?gain?bandwidth product v ce = 2 v v ce = 2 v
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 7 ordering information device package type package shipping ? mjd44h11g dpak (pb?free) 369c 75 units / rail njvmjd44h11g dpak (pb?free) 369c 75 units / rail mjd44h1 1?1g dpak?3 (pb?free) 369d 75 units / rail mjd44h11rlg dpak (pb?free) 369c 1,800 / tape & reel njvmjd44h11rlg* dpak (pb?free) 369c 1,800 / tape & reel mjd44h11t4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd44h11t4g* dpak (pb?free) 369c 2,500 / tape & reel mjd44h11t5g dpak (pb?free) 369c 2,500 / tape & reel mjd45h11g dpak (pb?free) 369c 75 units / rail NJVMJD45H11G* dpak (pb?free) 369c 75 units / rail mjd45h1 1?1g dpak?3 (pb?free) 369d 75 units / rail mjd45h11rlg dpak (pb?free) 369c 1,800 / tape & reel njvmjd45h11rlg* dpak (pb?free) 369c 1,800 / tape & reel mjd45h11t4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd45h11t4g* dpak (pb?free) 369c 2,500 / tape & reel njvmjd44h11d3t4g* dpak (pb?free) 369g 2,500 / tape & reel njvmjd45h11d3t4g* dpak (pb?free) 369g 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 8 package dimensions dpak (single gauge) case 369c issue f style 1: pin 1. base 2. collector 3. emitter 4. collector b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z
mjd44h11 (npn), mjd45h11 (pnp) www. onsemi.com 9 package dimensions 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c style 1: pin 1. base 2. collector 3. emitter 4. collector 0.180 bsc dpak?3, surf ace mount case 369g issue o d a k b r v f g 2 pl dim min max min max millimeters inches a 0.235 0.245 5.97 6.22 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 r 0.180 0.215 4.57 5.45 v 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.13 (0.005) t l 0.090 bsc 2.29 bsc u 0.020 ??? 0.51 ??? 123 4 e c u j h ?t? seating plane z style 1: pin 1. base 2. collector 3. emitter 4. collector l on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjd44h11/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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